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| SMD Type Silicon NPN Epitaxial Planar type 2SC4738 Transistors SOT-523 +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 Unit: mm +0.01 0.1-0.01 2 1 +0.15 1.6-0.15 High voltage and high current:VCE=50V,IC=150mA(Max.) Excellent hFE linearity :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) High hFE: =120 to 700 +0.25 0.3-0.05 0.5 +0.1 -0.1 0.35 3 1. Base +0.05 0.75-0.05 +0.1 0.8-0.1 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 60 50 5 150 30 100 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector emitter saturation voltage Collector output capacitance Transition frequency Symbol ICBO IEBO hFE VCE(sat) cob fT Testconditons VCB=60 V, IE= 0 VEB= 5 V, IC = 0 VCE= 6 V, IC = 2 mA IC=100mA,IB=10mA VCB=10V,IE=0,f=1MHz VCE = 10V, IC = 1mA 80 120 0.1 2.0 Min Typ Max 0.1 0.1 700 0.25 3.5 V pF MHz Unit A A hFE Classification Marking Rank hFE 120 LY Y 240 LGR GR 200 400 LBL BL 350 700 +0.05 0.8-0.05 Features 0.55 www.kexin.com.cn 1 |
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